Paper Title:
Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon
  Abstract

In this work, we present a detailed structural characterization of the defects formed after 0.5 keV B+ implantation into Si to a dose of 1x1015 ions/cm2 and annealed at 650°C and 750°C during different times up to 160 s. The clusters were characterized by making use of Weak Beam and High Resolution Transmission Electron Microscopy (HRTEM) imaging. They are found to be platelets of several nanometer size with (001) habit plane. Conventional TEM procedure based on defect contrast behavior was applied to determine the directions of their Burger’s vectors. Geometric Phase Analysis of HRTEM images was used to measure the displacement field around these objects and, thus, to unambiguously determine their Burger’s vectors. Finally five types of dislocation loops lying on (001) plane are marked out: with ] 001 [1/3 ≅ b and b ∝ [1 0 1], [-1 0 1], [0 1 1], [0 -1 1].

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
303-308
DOI
10.4028/www.scientific.net/SSP.108-109.303
Citation
N. Cherkashin, M. J. Hÿtch, F. Cristiano, A. Claverie, "Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon", Solid State Phenomena, Vols. 108-109, pp. 303-308, 2005
Online since
December 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: X. Zhang, Seo Young Ha, M. Benamara, Marek Skowronski, Joseph J. Sumakeris, Sei Hyung Ryu, Michael J. Paisley, Michael J. O'Loughlin
Abstract:Structure of the “carrot” defects in 4H-SiC homoepitaxial layers deposited by CVD has been investigated by plan-view and cross-sectional...
327
Authors: Heidi Nordmark, Alexander G. Ulyashin, John Charles Walmsley, Randi Holmestad
Abstract:Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) have been used to compare hydrogen defects formed in p doped...
309
Authors: I.N. Qureshi, S. Rani, F. Yasmin, M. Farooque
Abstract:Elgiloy is Co based alloy (40wt%Co, 20wt%Cr, 15wt%Ni, 14wt%Fe and 7wt%Mo). It was strengthened by cold work and is capable of additional...
268
Authors: Masakazu Katsuno, Tatsuo Fujimoto, Hirokatsu Yashiro, Hiroshi Tsuge, Shinya Sato, Hosei Hirano, Takayuki Yano, Wataru Ohashi
Chapter 3: Physical Properties and Characterization of SiC
Abstract:Structures and propagating behaviors of threading dislocations (TDs) in PVT-grown 4H-SiC single crystals were both investigated using...
355
Authors: Jie Sun, Li Fu
Chapter 7: New Functional Materials
Abstract:Two types of 60° perfect dislocation in Cd0.9Zn0.1Te single crystals were observed by HRTEM. The Burger’s vector of the...
1175