Paper Title:
Impact of Hydrogen Implantation on Helium Implantation Induced Defects
  Abstract

Silicon-based power device performances are largely affected by metal contamination occurring during device manufacturing. Among the usual gettering techniques, recent developments were done on high dose helium implantation. Even though the gettering efficiency of this technique has been demonstrated in device application, the required doses are still extremely high for an industrial application. Recently, it has been shown that the use of H/He co-implantation limits the total requested doses [1]. In this paper, co-implantation of H/He, which has been already used to reduce the dose in the smart-cut® process is explored. The goal of this work is to decrease efficiently the implanted dose maintaining an efficient metallic gettering without degrading the Si surface. The impact of H implantation on He implantation induced defects is carefully studied. The TEM observations have evidenced that hydrogen addition drastically modified the defect band structure and promotes the cavity growth.. Additionally, we demonstrate that an efficient gettering can be obtained.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
309-314
DOI
10.4028/www.scientific.net/SSP.108-109.309
Citation
G. Gaudin, F. Cayrel, C. Bongiorno, R. Jérisian, V. Raineri, D. Alquier, "Impact of Hydrogen Implantation on Helium Implantation Induced Defects", Solid State Phenomena, Vols. 108-109, pp. 309-314, 2005
Online since
December 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: D. Krüger, R. Kurps, Peter Formanek, G. Weidner
77
Authors: H. Assaf, E. Ntsoenzok, M.O. Ruault, O. Kaïtasov
Abstract:We implanted 300keV Xenon in silicon oxide at doses ranging from 1x1016 to 5x1016/cm2. For the first time, we reported the formation and the...
291
Authors: Isabella Mica, Maria Luisa Polignano, F. Cazzaniga, L. Di Piazza, M. Mariani, E. Ricci, F. Sammiceli, S. Speranza
Abstract:The recovery of the boron implantation damage can be very difficult. Depending on the energy and the dose many dislocations are generated at...
269
Authors: Xi Song, Jérôme Biscarrat, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Thierry Chassagne, Marc Portail, Emmanuel Collard, Daniel Alquier
Chapter 4: Characterization: Devices and Material
Abstract:In this paper, we studied the influence of nitrogen implantation dose on both physical and electrical properties in 3C-SiC grown on Si (100)...
154
Authors: Katsunori Danno, H. Saitoh, Akinori Seki, T. Shirai, Hiroshi Suzuki, T. Bessho, Yoichiro Kawai, Tsunenobu Kimoto
Chapter 3: Physical Properties and Characterization of SiC
Abstract:Diffusion of transition metals in 4H-SiC has been investigated by secondary ion mass spectroscopy using epilayers and substrates implanted...
225