Paper Title:
Electrical Passivation of Silicon Wafers
  Abstract

Surface passivation in silicon wafers is investigated by contactless photoconductance measurements. It is shown that the deposition of a-Si:H layers on top of c-Si wafers leads to passivation of the c-Si surface. Passivation by Si3N4 of the p c-Si surface is at least partially due to the depletion layer at the interface. The separation of excess charge carriers by the depletion field is responsible for a relatively slowly decaying part of the signal not directly related to bulk recombination. An HF dip is not sufficient for an appropriate passivation of p c-Si but immersion in I2/ethanol solution is promising.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
327-332
DOI
10.4028/www.scientific.net/SSP.108-109.327
Citation
M. Kunst, F. Wünsch, O. Abdallah, G. Citarella, "Electrical Passivation of Silicon Wafers", Solid State Phenomena, Vols. 108-109, pp. 327-332, 2005
Online since
December 2005
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Price
$32.00
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