Passivation of Ge Nanocrystals in SiO2 |
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| Journal | Solid State Phenomena (Volumes 108 - 109) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by | B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages | 33-38 |
| DOI | 10.4028/www.scientific.net/SSP.108-109.33 |
| Citation | Jesper Skov Jensen et al., 2005, Solid State Phenomena, 108-109, 33 |
| Online since | December, 2005 |
| Authors | Jesper Skov Jensen, Tom P. Leervad Pedersen, Rui Pereira, Pia Bomholt, Jacques Chevallier, Ole Hansen, Arne Nylandsted Larsen, Brian Bech Nielsen |
| Keywords | Ge, Nanocrystal, Passivation, Photoluminescence (PL) |
| Abstract | Nanocrystals have attracted considerable attention in recent years because of their potential applications as a light source in Si technology. From theory Ge nanocrystals are expected to have better luminescence properties than Si nanocrystals. In this study we have compared Ge nanocrystals produced both in PE-CVD deposited and magnetron sputtered SiO2 doped with Ge during deposition to concentrations between 3-9 at.%, followed by high temperature treatment at temperatures between 600 and 1100°C. The nanocrystals were structurally characterized by Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM) and electron paramagnetic resonance (EPR). The interface of the nanocrystals was passivated by use of alnealing, while the effect of the passivation was monitored by photoluminescence (PL) |
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