Paper Title:
Passivation of Ge Nanocrystals in SiO2
  Abstract

Nanocrystals have attracted considerable attention in recent years because of their potential applications as a light source in Si technology. From theory Ge nanocrystals are expected to have better luminescence properties than Si nanocrystals. In this study we have compared Ge nanocrystals produced both in PE-CVD deposited and magnetron sputtered SiO2 doped with Ge during deposition to concentrations between 3-9 at.%, followed by high temperature treatment at temperatures between 600 and 1100°C. The nanocrystals were structurally characterized by Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM) and electron paramagnetic resonance (EPR). The interface of the nanocrystals was passivated by use of alnealing, while the effect of the passivation was monitored by photoluminescence (PL)

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
33-38
DOI
10.4028/www.scientific.net/SSP.108-109.33
Citation
J. S. Jensen, T. P. Leervad Pedersen, R. Pereira, P. Bomholt, J. Chevallier, O. Hansen, A. N. Larsen, B. B. Nielsen, "Passivation of Ge Nanocrystals in SiO2", Solid State Phenomena, Vols. 108-109, pp. 33-38, 2005
Online since
December 2005
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Price
$32.00
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