Paper Title:
Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO2 System Properties
  Abstract

The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time, impurity content. The interaction between point defects with extended defects and impurities affect the Si-SiO2 interface properties. The influence of point defects may be diminished and the interface properties improved by an appropriate choice of oxidation conditions.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
333-338
DOI
10.4028/www.scientific.net/SSP.108-109.333
Citation
D. Kropman, U. Abru, T. Kärner, U. Ugaste, E. Mellikov, M. Kauk, I. Heinmaa, A. Samoson, A. Medvid, "Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO2 System Properties", Solid State Phenomena, Vols. 108-109, pp. 333-338, 2005
Online since
December 2005
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Price
$32.00
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