Paper Title:
Magnetic-Field-Induced Modification of Properties of Silicon Lattice Defects
  Abstract

A possibility of magnetic-field-induced modification of structural defects in silicon crystals is studied. It is shown that magnetic field action essentially affects the structuredependent properties of Si (mechanical and electrophysical)

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
339-344
DOI
10.4028/www.scientific.net/SSP.108-109.339
Citation
V.A. Makara, L.P. Steblenko, Y.L. Kolchenko, S.M. Naumenko, O.A. Patran, V.M. Kravchenko, O.S. Dranenko, "Magnetic-Field-Induced Modification of Properties of Silicon Lattice Defects", Solid State Phenomena, Vols. 108-109, pp. 339-344, 2005
Online since
December 2005
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Price
$32.00
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