Determination of Effective Diffusion Coefficient of Copper in Silicon by Diffusion from Bulk into the Polysilicon Backside |
| Journal |
Solid State Phenomena (Volumes 108 - 109) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by |
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages |
385-394 |
| DOI |
10.4028/www.scientific.net/SSP.108-109.385 |
| Citation |
Mohammad B. Shabani et al., 2005, Solid State Phenomena, 108-109, 385 |
| Online since |
December, 2005 |
| Authors |
Mohammad B. Shabani, K. Hirano, Y. Shiina, T. Kihara, T. Shingyoji |
| Keywords |
AAS, Copper (Cu), Cz Boron-Doped Silicon, Effective Diffusion Coefficient, Gettering, ICP-MS, Poly-Silicon, Relaxation Gettering, Segregation Gettering |
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