Paper Title:
The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix
  Abstract

The properties of Si and Ge nanocrystals with uniformly strained Si-Si and Ge-Ge bonds have been studied. The strained Si and Ge nanocrystals were produced by the implantation of Ge+ or Si+ ions in thermally grown SiO2 films subsequently annealed under hydrostatic pressure ranging from 1 bar to 12 kbar. Correlation between the formation of the hydrostatically strained nanocrystals and the features of the photoluminescence spectra has been observed. The obtained results are discussed in terms of broadening energy gap between the levels of electron states of the hydrostatically strained nanocrystals. This effect brings about direct radiative recombination.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
39-44
DOI
10.4028/www.scientific.net/SSP.108-109.39
Citation
I. E. Tyschenko, A.B. Talochkin, E.N. Vandyshev, A.G. Cherkov, A. Misiuk, "The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix", Solid State Phenomena, Vols. 108-109, pp. 39-44, 2005
Online since
December 2005
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Price
$32.00
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