Paper Title:
Formation of Vacancies and Divacancies in Plane-Stressed Silicon
  Abstract

The effect of compressive and tensile plane-stress loading on formation energies and electronic properties of vacancies and divacancies in silicon are studied by first-principles approach for in-plane strains up to 0.7%. It is demonstrated that contributions to defect formation energies from the elastic lattice relaxation and from the band structure modification respond to stress in a different manner, leading to noticeable different behaviour of formation energies for different charges states. The most stable vacancy charge states at different Fermi level are shown to be sensitive to strain magnitude and sign. This results in the strain-induced shifts and even disappearance of some of thermal ionization levels of vacancies and divacancies in the band gap.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
433-438
DOI
10.4028/www.scientific.net/SSP.108-109.433
Citation
S. Nicolaysen, M. G. Ganchenkova, R. M. Nieminen, "Formation of Vacancies and Divacancies in Plane-Stressed Silicon", Solid State Phenomena, Vols. 108-109, pp. 433-438, 2005
Online since
December 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ju Young Kim, Baik Woo Lee, Ho Seok Nam, Dong Il Kwon
Abstract:Amorphous silicon carbide (a-SiC) films were deposited using molecular dynamics simulations employing the Tersoff potential. The structure...
97
Authors: Olaf Engler, Yuguo An
Abstract:The control of the plastic anisotropy during forming of a metallic sheet requires detailed knowledge on its microstructure and, especially,...
277
Authors: Kenji Suzuki, Takahisa Shobu, Keisuke Tanaka
333
Authors: De Qiang Sun, Meng Cai, Wen Ting Cao
Chapter 1: Machinery and Engineering Applications
Abstract:A finite element model is designed to obtain the mechanical parameters about cushioning property of multilayer regular triangular honeycombs...
147