Paper Title:
Impact of the Growth Parameters on the Structural Properties of Si0.8Ge0.2 Virtual Substrates
  Abstract

We have focused in this paper on the impact of the growth rate and of the grading rate on the structural properties of Si0.8Ge0.2 virtual substrates grown at 900°C in a commercial reduced pressure chemical vapour deposition reactor. Adopting a grading rate of 4% Ge / $m together with a growth rate around 140 nm min.-1 yields very high quality Si0.8Ge0.2 virtual substrates. Their macroscopic degree of strain relaxation is indeed very close to 100%, their surface root mean square roughness is around 2.3 nm and most importantly their field threading dislocation density is of the order of 6x104 cm-2 only, with almost no pile-ups.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
445-450
DOI
10.4028/www.scientific.net/SSP.108-109.445
Citation
Y. Bogumilowicz, J.M. Hartmann, F. Laugier, G. Rolland, T. Billon, "Impact of the Growth Parameters on the Structural Properties of Si0.8Ge0.2 Virtual Substrates", Solid State Phenomena, Vols. 108-109, pp. 445-450, 2005
Online since
December 2005
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Price
$32.00
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