Paper Title:
Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs
  Abstract

The aim of this work is to study the physical obstacles introduced by the use of high-k MOSFETs structures and discuss basic problems associated with high-k candidates currently investigated such as low carrier mobility and parasitic interfacial layers and to present other ways to reduce the undesirable secondary effects when one replaces silicon with a high dielectric oxyde (high-k). We will show that use of the nitride allows reducing the effects of the interfacial layers with an acceptable reduction rate of mobility.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
45-52
DOI
10.4028/www.scientific.net/SSP.108-109.45
Citation
Y. Amhouche, K. Rais, "Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs", Solid State Phenomena, Vols. 108-109, pp. 45-52, 2005
Online since
December 2005
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Price
$32.00
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