Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs |
|
| Journal | Solid State Phenomena (Volumes 108 - 109) |
|---|---|
| Volume | Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by | B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages | 45-52 |
| DOI | 10.4028/www.scientific.net/SSP.108-109.45 |
| Citation | Y. Amhouche et al., 2005, Solid State Phenomena, 108-109, 45 |
| Online since | December, 2005 |
| Authors | Y. Amhouche, K. Rais |
| Keywords | High-k, Interfacial Layer, Mobility, Nitride, Surface Roughness (SR) |
| Abstract | The aim of this work is to study the physical obstacles introduced by the use of high-k MOSFETs structures and discuss basic problems associated with high-k candidates currently investigated such as low carrier mobility and parasitic interfacial layers and to present other ways to reduce the undesirable secondary effects when one replaces silicon with a high dielectric oxyde (high-k). We will show that use of the nitride allows reducing the effects of the interfacial layers with an acceptable reduction rate of mobility. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
