Paper Title:
Сavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures
  Abstract

Cavity effect on the room-temperature (RT) photoluminescence (PL) from emitting centers in the top silicon layer of silicon-on-insulator (SOI) structure has been studied. The lightemitting centers were produced by the implantation of H+ ions and subsequent annealing at the temperatures Ta = 450-1000 oC for 5 h in an Ar ambient under pressure P = 1 - 1.2×104 bar. It has been obtained that annealing under hydrostatic pressure higher than 6 kbar prevented the outdiffusion of hydrogen in the form of gas bubbles, which took place after annealing at Ta≥600 oC under atmospheric conditions. Absence of micro-pores and gas bubbles in the top surface region creates the conditions to retain the mirror quality of the SOI/air interface. A wavelength-selective effect of the formed cavity on visible PL has been observed from the H+ ion implanted SOI structures annealed under pressure of 12 kbar. The cavity enhancement of PL emission for 23-40 times has been found at the wavelength of 515 and 560 nm.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
477-482
DOI
10.4028/www.scientific.net/SSP.108-109.477
Citation
I. E. Tyschenko, K.S. Zhuravlev, A.G. Cherkov, A. Misiuk, V.P. Popov, "Сavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures", Solid State Phenomena, Vols. 108-109, pp. 477-482, 2005
Online since
December 2005
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Price
$32.00
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