Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures |
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| Journal | Solid State Phenomena (Volumes 108 - 109) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by | B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages | 489-496 |
| DOI | 10.4028/www.scientific.net/SSP.108-109.489 |
| Citation | I.V. Antonova et al., 2005, Solid State Phenomena, 108-109, 489 |
| Online since | December, 2005 |
| Authors | I.V. Antonova, L.L. Golik, M.S. Kagan, V.I. Polyakov, A.I. Rukavischnikov, N.M. Rossukanyi, J. Kolodzey |
| Keywords | Deep-Level Transient Spectroscopy, SiGe Quantum Well, Trap, Vertical Transport |
| Abstract | Electrical transport and traps in vertical SiGe/Si QW structures of low background doping level are studied in the presented report. Temperature activation of holes from the quantum well was found to determine the vertical current through Si/SiGe/Si structures at T > 160 K. At lower temperatures (T < 130 K), the current mechanism is attributed to a thermally activated tunneling of holes from quantum well. Deep traps are observed in the Si/SiGe/Si structures in high concentration (1011 – 1012 cm-2). Traps are most likely assistance in the current in the vertical Si/SiGe/Si structures as recombination centers near the QW. |
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