Paper Title:
Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures
  Abstract

Electrical transport and traps in vertical SiGe/Si QW structures of low background doping level are studied in the presented report. Temperature activation of holes from the quantum well was found to determine the vertical current through Si/SiGe/Si structures at T > 160 K. At lower temperatures (T < 130 K), the current mechanism is attributed to a thermally activated tunneling of holes from quantum well. Deep traps are observed in the Si/SiGe/Si structures in high concentration (1011 – 1012 cm-2). Traps are most likely assistance in the current in the vertical Si/SiGe/Si structures as recombination centers near the QW.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
489-496
DOI
10.4028/www.scientific.net/SSP.108-109.489
Citation
I.V. Antonova, L.L. Golik, M.S. Kagan, V.I. Polyakov, A.I. Rukavischnikov, N.M. Rossukanyi, J. Kolodzey, "Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures", Solid State Phenomena, Vols. 108-109, pp. 489-496, 2005
Online since
December 2005
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Price
$32.00
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