Paper Title:
Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties
  Abstract

The paper describes the elaboration of a method for producing composite Si/SiC wafers and investigation of their properties. The known two-shaping elements (TSE) method was used to produce the material. Pilot tests show that this composite material can be used for production of solar cells. The structure of silicon grains is elongated relative to the growth direction, the dislocation density in grains is of about (5÷8) ×104 cm-2, the average lifetime of minority carriers is 4÷6 µs.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
503-508
DOI
10.4028/www.scientific.net/SSP.108-109.503
Citation
S. K. Brantov, V. V. Kveder, N.N. Kuznetzov, V. I. Orlov, "Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties", Solid State Phenomena, Vols. 108-109, pp. 503-508, 2005
Online since
December 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: L.B. Rowland, Jeffery L. Wyatt, Jody Fronheiser, Alexey V. Vert, Peter M. Sandvik, T. Borsa, J. Van Zeghbroeck, Bart Van Zeghbroeck, S. Babu
Abstract:We report on the fabrication and testing of SiC p-i-n avalanche photodiodes. APDs of 0.25 mm2 area on a-plane (1120) 6H-SiC as well as...
869
Authors: Yan Li Xu, Jin Hua Li
Chapter 9: New Energy Materials
Abstract:n-ZnO thin films doped In with 2 atm.% were deposited on p-type silicon wafer with textured surface by Ion Beam Enhanced Deposition method,...
1477
Authors: Der Yuh Lin, Chao Yu Chi
Chapter 3: Energy and Power Engineering
Abstract:We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the...
1168
Authors: Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama
Chapter 9: Processing Diverse
Abstract:Solar-to-hydrogen conversion efficiencies of water photolysis with epitaxially grown p-type 4H-, 6H- and 3C-SiC were estimated in the two...
859