Paper Title:
Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films
  Abstract

The laser assisted formation of silicon nanocrystals in SiNx films deposited on quartz and silicon substrates is studied. The Raman spectroscopy revealed creation of the Si cluster and crystallite after excimer laser treatments. Photoluminescence signal from the samples was detected at room temperatures. I-V and C-V measurements were carried out to examine carries transfer through dielectrics film as well as recharging of electronics states.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
53-58
DOI
10.4028/www.scientific.net/SSP.108-109.53
Citation
S. A. Arzhannikova, M.D. Efremov, V. A. Volodin, G.N. Kamaev, D.V. Marin, S.A. Soldatenkov, V.S. Shevchuk, S.A. Kochubei, A.A. Popov, Y. A. Minakov, "Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films", Solid State Phenomena, Vols. 108-109, pp. 53-58, 2005
Online since
December 2005
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Price
$32.00
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