Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films |
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| Journal | Solid State Phenomena (Volumes 108 - 109) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by | B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages | 53-58 |
| DOI | 10.4028/www.scientific.net/SSP.108-109.53 |
| Citation | Sofia A. Arzhannikova et al., 2005, Solid State Phenomena, 108-109, 53 |
| Online since | December, 2005 |
| Authors | Sofia A. Arzhannikova, M.D. Efremov, Vladimir A. Volodin, G.N. Kamaev, D.V. Marin, S.A. Soldatenkov, V.S. Shevchuk, S.A. Kochubei, A.A. Popov, Yu. A. Minakov |
| Keywords | Nonvolatile Memory, Photoluminescence (PL), Raman Scattering, Silicon Nanocrystals |
| Abstract | The laser assisted formation of silicon nanocrystals in SiNx films deposited on quartz and silicon substrates is studied. The Raman spectroscopy revealed creation of the Si cluster and crystallite after excimer laser treatments. Photoluminescence signal from the samples was detected at room temperatures. I-V and C-V measurements were carried out to examine carries transfer through dielectrics film as well as recharging of electronics states. |
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