Paper Title:
Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon
  Abstract

In this work the efficiencies of different surface passivation techniques are compared. This paper emphasizes on the passivation provided by SiNx:H layers that is commonly used in photovolaic industry as surface passivation and anti reflection layer. The method used to evaluate the surface recombination velocity is detailed and discussed. It is shown that light phosphorus diffusion at 850°C – 20 min provides good surface passivation of n-type silicon surface and noticeable passivation of p-type, that can be improved by SiNx:H Layer.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
585-590
DOI
10.4028/www.scientific.net/SSP.108-109.585
Citation
O. Palais, M. Lemiti, J.-F. Lelievre, S. Martinuzzi, "Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon", Solid State Phenomena, Vols. 108-109, pp. 585-590, 2005
Online since
December 2005
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Price
$32.00
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