Stability of Emission Properties of Silicon Nanostructures |
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| Journal | Solid State Phenomena (Volumes 108 - 109) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by | B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages | 59-64 |
| DOI | 10.4028/www.scientific.net/SSP.108-109.59 |
| Citation | M. Baran et al., 2005, Solid State Phenomena, 108-109, 59 |
| Online since | December, 2005 |
| Authors | M. Baran, L. Khomenkova, N. Korsunska, T. Stara, Moissei K. Sheinkman, V. Yukhymchuk, V. Khomenkov, Y. Goldstein, J. Jedrzejewski, E. Savir |
| Keywords | Defect, Light Emission, Silicon Nanostructure, Stability |
| Abstract | The aging process of silicon nanostructures obtained by magnetron sputtering and electrochemical etching is investigated by photoluminescence and Raman scattering methods. It is shown that oxidation of silicon crystallites takes place in both types of structures and results in appearance of additional emission bands. However the degree of oxidation in etched structures exceeds significantly this value for sputtered samples. It is found that the intensity and spectral position of the emission band caused by exciton recombination in Si crystallites do not change practically during aging in sputtered structures in contrast to etched ones. It is shown that the oxidation of silicon amorphous phase occur during aging in sputtered structures. |
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