Paper Title:
Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR
  Abstract

This work proposes some improvements over the current state-of-the-art of carbon measurement in silicon by means of Fourier Transform Infrared Spectroscopy (FTIR) at low temperature (77 K), as described in the ASTM F1391-93 (2000) standard method.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
591-596
DOI
10.4028/www.scientific.net/SSP.108-109.591
Citation
M. Porrini, I. Crössmann, M.G. Pretto, R. Scala, R. Wolf, "Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR ", Solid State Phenomena, Vols. 108-109, pp. 591-596, 2005
Online since
December 2005
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