Paper Title:
Potential and Limitations of Electron Holography in Silicon Research
  Abstract

We report on electron holography as a promising candidate for diagnostics in silicon technology and research. Electron holography determines the local phase shift of the electron wave passing through a sample. The phase is proportional to the 2D projected electrostatic potential in the sample and thus reveals p-n junctions and, indirectly, doping. We demonstrate detection of submonolayer boron layers in Si and SiGe, measurement of Ge concentration in SiGe and qualitative 2D oxygen mapping in SiO2/Si structures with 0.5 nm resolution, and comparison of doping in two bipolar transistors with different base implant. Resolution and noise limits are discussed.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
603-608
DOI
10.4028/www.scientific.net/SSP.108-109.603
Citation
P. Formanek, M. Kittler, "Potential and Limitations of Electron Holography in Silicon Research", Solid State Phenomena, Vols. 108-109, pp. 603-608, 2005
Online since
December 2005
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Price
$32.00
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