Paper Title:
EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon
  Abstract

The electrical activity of stacking faults (SFs) in multicrystalline sheet silicon has been examined by correlating EBIC(electron beam induced current), preferential defect etching, and microwave photo-conductance decay (PCD) lifetime measurements. Following a three hour 1060 0C annealing the interstitial oxygen concentration decreased from 14 to 4.5 x 1017 cm-3, during which time a high density of SFs were generated in the center of individual large grains. Subsequent EBIC contrast variation within individual large grains was correlated with the local SF density revealed by preferential etching. In addition, a more quantitative intra-grain lifetime was obtained from high spatial resolution PCD measurements. It was found that an SF density of 1 to 2 x 106 cm-2 produces a lifetime limitation in sheet silicon which corresponds to a recombination lifetime of ~2 µs.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
627-630
DOI
10.4028/www.scientific.net/SSP.108-109.627
Citation
J. Lu, G. A. Rozgonyi, J. Rand, R. Jonczyk, "EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon", Solid State Phenomena, Vols. 108-109, pp. 627-630, 2005
Online since
December 2005
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Price
$32.00
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