Paper Title:
Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods
  Abstract

We compare SPV technique with µ−PCD for the determination of recombination activity of copper precipitates in p-Si. The copper precipitates were formed in bulk silicon through illumination at room temperature. We observed that the recombination activities of copper precipitates measured with SPV are higher than the ones measured with µ−PCD technique. However, it seems that the copper detection sensitivity is about the same with SPV and µ−PCD techniques.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
643-648
DOI
10.4028/www.scientific.net/SSP.108-109.643
Citation
M. Yli-Koski, H. Savin, E. Saarnilehto, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka, "Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods", Solid State Phenomena, Vols. 108-109, pp. 643-648, 2005
Online since
December 2005
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$32.00
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