Paper Title:
The Employment of Cathodoluminescent Method for Characterization of Silicon Oxide - Silicon Interface
  Abstract

In this work we studied the cathodoluminescence (CL) of thin silicon oxide and natural silicon oxide grown on different types of silicon substrates (p-silicon and n-silicon with different content of boron and phosphor). At the same time we studied the distribution of intrinsic defects on depth for thermal silicon oxide films with depth resolution 10-20 nm. The method of local cathodoluminescence was used for definition the structure defects in SiO2 think layer and control of the quality of SiO2-Si interface.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
649-654
DOI
10.4028/www.scientific.net/SSP.108-109.649
Citation
M.V. Zamoryanskaya, V.I. Sokolov, "The Employment of Cathodoluminescent Method for Characterization of Silicon Oxide - Silicon Interface", Solid State Phenomena, Vols. 108-109, pp. 649-654, 2005
Online since
December 2005
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Price
$32.00
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