Paper Title:
Measurement of Oi in Heavily Boron Doped Chemical Thinned Silicon by Low Temperature FTIR Spectroscopy
  Abstract

The content of interstitially solved oxygen (Oi) in heavily boron doped silicon (9- 29 mcm) were measured by low temperature Fourier transform infrared (FTIR) spectroscopy. Therefor an alternative thinning technique for silicon is used: by alkaline potassium hydroxide etching (KOH) prepolished silicon specimens are thinned down to 8 - 60 microns. The optimal end thickness depends on the boron concentration which specifies the free carrier concentration. Specimens with three different boron concentrations (9/19/29 mcm) were examined. The results are compared with gas fusion analysis (GFA) measurements. Furthermore the precipitated oxygen Oi was measured for a RTA process (20s@1250°C) with subsequent growth steps (4h@780°C + 16h@1000°C).

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
655-662
DOI
10.4028/www.scientific.net/SSP.108-109.655
Citation
M. Zschorsch, G. Gärtner, H. J. Möller, W. von Ammon, "Measurement of Oi in Heavily Boron Doped Chemical Thinned Silicon by Low Temperature FTIR Spectroscopy", Solid State Phenomena, Vols. 108-109, pp. 655-662, 2005
Online since
December 2005
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$32.00
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