Paper Title:
Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon
  Abstract

Recent progress is presented in the understanding of grown-in defects in Czochralskigrown germanium crystals with special emphasis on intrinsic point defects, on vacancy clustering and on interstitial oxygen. Whenever useful the results are compared with those obtained for silicon.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
683-690
DOI
10.4028/www.scientific.net/SSP.108-109.683
Citation
J. Vanhellemont, S. Hens, J. Lauwaert, O. De Gryse, P. Vanmeerbeek, D. Poelman, P. Śpiewak, I. Romandic, A. Theuwis, P. Clauws, "Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon ", Solid State Phenomena, Vols. 108-109, pp. 683-690, 2005
Online since
December 2005
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Price
$32.00
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