Paper Title:
Helium Implantation Damage in SiC
  Abstract

Single crystals SiC were implanted with 50 keV helium ions at room temperature and fluences in the range 1x1016 -1x1017 cm-2. The helium implantation induced swelling was studied through the measurement of the step height. The damage was studied by using X-ray diffraction measurements and the transmission electron microscopy observations. Degradation of mechanical properties is found after helium implantation.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
709-712
DOI
10.4028/www.scientific.net/SSP.108-109.709
Citation
S. Leclerc, M. F. Beaufort, V. Audurier, A. Déclemy, J. F. Barbot, "Helium Implantation Damage in SiC", Solid State Phenomena, Vols. 108-109, pp. 709-712, 2005
Online since
December 2005
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$32.00
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