Paper Title:
Pulsed Laser Deposition of Hafnium Oxide on Silicon
  Abstract

Hafnium oxide films were prepared by Pulsed Laser Deposition (PLD). The influence of laser wavelength (fundamental, second and third harmonic of a Nd:YAG laser), used for evaporation, and substrate temperature on the film morphology, chemical structure and interfacial quality were investigated yielding the following results: While the laser wavelength exhibits minor influence on layer structure, the substrate temperature plays a critical role regarding morphological and chemical structure of the produced hafnium oxide / silicon stacks. Atomic Force Microscopy (AFM) images show a clear transition from smooth layers consisting of small area crystallites to very rough surfaces characterized by large craters and regular, plane features when the growth temperature was increased. These facts suggest a chemical instability which is confirmed by X-ray Photoelectron Spectroscopy (XPS). Investigations of the hafnium and silicon core level spectra indicate the occurrence of silicon dioxide and hafnium silicide in the case the samples were produced at elevated temperatures.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
723-728
DOI
10.4028/www.scientific.net/SSP.108-109.723
Citation
M. Kappa, M. Ratzke, J. Reif, "Pulsed Laser Deposition of Hafnium Oxide on Silicon", Solid State Phenomena, Vols. 108-109, pp. 723-728, 2005
Online since
December 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Pascal Besson, Virginie Loup, Thierry Salvetat, Névine Rochat, Sandrine Lhostis, Sylvie Favier, Karen Dabertrand, Vincent Cosnier
67
Authors: L. Minati, Giorgio Speranza, Yoann Jestin, Cristina Armellini, Andrea Chiappini, A. Chiasera, Maurizio Ferrari, G.C. Righini
Abstract:Two series of xHfO2 - (100-x) SiO2 (x=10, 20, 30 mol%) glass-ceramics planar waveguides doped with 0.3 mol% Er3+ ions were prepared by the...
56
Authors: Adam Łaszcz, Andrzej Czerwiński, Jacek Ratajczak, Andrzej Taube, Sylwia Gierałtowska, Ania Piotrowska, Jerzy Kątcki
Abstract:Transmission electron microscopy (TEM) techniques were used for characterization of annealing (400, 600 and 800 °C) influence on the...
78
Authors: M.S. Lebedev
I. Infrastructural and Bio-Materials
Abstract:Structures to Be Based on Hafnium Dioxide Are Regarded as the Most Perspective High-K Dielectric for Integration in MOS-Technology, Carbon...
7
Authors: Suguru Saito, Yoshiya Hagimoto, Hayato Iwamoto
Chapter 7: Metal Contamination
Abstract:High-k gate dielectrics and metal gate electrodes have become essential for emerging device technologies because they enable the continuous...
265