Paper Title:
Rare Earth Ion Implantation for Silicon Based Light Emission
  Abstract

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
755-760
DOI
10.4028/www.scientific.net/SSP.108-109.755
Citation
W. Skorupa, J.M. Sun, S. Prucnal, L. Rebohle , T. Gebel, A. Nazarov, I.N. Osiyuk, M. Helm, "Rare Earth Ion Implantation for Silicon Based Light Emission", Solid State Phenomena, Vols. 108-109, pp. 755-760, 2005
Online since
December 2005
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Price
$32.00
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