Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO2
Layer |
| Journal |
Solid State Phenomena (Volumes 108 - 109) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by |
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages |
77-82 |
| DOI |
10.4028/www.scientific.net/SSP.108-109.77 |
| Online since |
December, 2005 |
| Authors |
I.E. Tyschenko,
A.A. Frantsuzov,
O.V. Naumova,
B.I. Fomin,
D.V. Nikolaev,
V.P. Popov
|
| Keywords |
Carrier Trapping, Germanium, Nanocrystal, Silicon on Insulator |
| Abstract |
Electro-physical properties of metal-oxide-silicon (MOS) structures and MOS transistors, prepared in the top silicon layer of silicon-on-insulator (SOI) structures containing Ge nanocrystals in the buried SiO2 layers, have been studied. It was obtained that carrier accumulation in MOS structures depend on the direction of built-in electrical field in MOS structures. Accumulation of the excess negative charges in the case of p-channel transistors is associated with electron trapping on Ge nanocrystals synthesized in the buried dielectric. In the case of n-channel transistor, positive charge related to the Si/SiO2 interface or to the charged oxide is accumulated. The Ge atoms diffused to the SiO2/Si interface can stimulate the formation of the excess positive charge. |
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