Dislocation Related PL of Multi-Step Annealed Cz-Si Samples |
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| Journal | Solid State Phenomena (Volumes 108 - 109) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by | B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages | 773-778 |
| DOI | 10.4028/www.scientific.net/SSP.108-109.773 |
| Citation | E.A. Steinman et al., 2005, Solid State Phenomena, 108-109, 773 |
| Online since | December, 2005 |
| Authors | E.A. Steinman, A.N. Tereshchenko, V.I. Vdovin, Andrzej Misiuk |
| Keywords | Dislocations, Gettering, Impurity, PL, Silicon |
| Abstract | The samples of Cz Si were subjected to multi-step annealing at different temperatures. After high temperature consequent steps the dislocation related spectra (DRL) were detected from the samples. The main feature of the DRL spectra was the very narrow low energy bands D1/D2, which are unusual for Cz Si. TEM analysis shown that the only candidates for DRL spectra are dislocation loops, punched out from precipitates. To explain the absence of influence of oxygen it was assumed that the distribution of interstitial oxygen is nonuniform in such samples and has some depletion regions in the vicinity of precipitates. |
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