Defect Formation in MBE Er-Doped Si Light-Emitting Structures |
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| Journal | Solid State Phenomena (Volumes 108 - 109) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by | B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages | 779-786 |
| DOI | 10.4028/www.scientific.net/SSP.108-109.779 |
| Citation | V.I. Vdovin et al., 2005, Solid State Phenomena, 108-109, 779 |
| Online since | December, 2005 |
| Authors | V.I. Vdovin, N.A. Sobolev, D.V. Denisov, Elena I. Shek |
| Keywords | Erbium, Light Emitting Devices, Molecular Beam Epitaxy, Silicon |
| Abstract | Structural defects in Si:Er layers grown by molecular beam epitaxy have been studied by transmission electron microscopy. Two kinds of second phase precipitates are the main defects in the layers with Er concentration ≥ 2х1019 cm-3: ball-shaped precipitates (4-25 nm) of metallic Er localized at the layer-substrate interface and platelet precipitates of ErSi2 extending through the whole layer. We studied the effect of Er concentration (8х1018 - 4х1019 cm-3) and growth temperature (400 - 700°C) on the defect generation. The peculiarities of defect generation in MBE Si:Er layers implanted with B+ ions were also studied. |
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