Paper Title:
Thin SiGe Relaxed Buffer for Strain Adjustment
  Abstract

Strain adjustment is obtained by virtual substrates which are composed of a silicon substrate and a strain relaxed buffer. The basics of strain relaxation are explained and applied to the covalent bonded Si/Ge system which shows a large regime of metastability. A solution to ultrathin strain relaxed buffers is given by the injection of point defects which nucleate to dislocation loops in the interface. Principle and injection mechanism are shown.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
797-0
DOI
10.4028/www.scientific.net/SSP.108-109.797
Citation
E. Kasper, K. Lyutovich, "Thin SiGe Relaxed Buffer for Strain Adjustment", Solid State Phenomena, Vols. 108-109, pp. 797-0, 2005
Online since
December 2005
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Price
$32.00
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