Thin SiGe Relaxed Buffer for Strain Adjustment |
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| Journal | Solid State Phenomena (Volumes 108 - 109) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by | B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages | 797-0 |
| DOI | 10.4028/www.scientific.net/SSP.108-109.797 |
| Citation | Erich Kasper et al., 2005, Solid State Phenomena, 108-109, 797 |
| Online since | December, 2005 |
| Authors | Erich Kasper, Klara Lyutovich |
| Keywords | Misfit Dislocation, Point Defect, Strain Relaxation, Virtual Substrate |
| Abstract | Strain adjustment is obtained by virtual substrates which are composed of a silicon substrate and a strain relaxed buffer. The basics of strain relaxation are explained and applied to the covalent bonded Si/Ge system which shows a large regime of metastability. A solution to ultrathin strain relaxed buffers is given by the injection of point defects which nucleate to dislocation loops in the interface. Principle and injection mechanism are shown. |
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