Paper Title:
µ-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon
  Abstract

µ-Raman measurements were carried out on hydrogen implanted, plasma hydrogenated and subsequently annealed Cz Silicon samples, respectively. In comparison to as-implanted or asplasma treated samples, in consideration of the thermal evolution, the effects of the implanted and subsequently plasma treated samples were analyzed. An enhanced trapping of molecular hydrogen in multivacancies has been observed after hydrogen implantation and subsequent plasma hydrogenation. In comparison to as-implanted samples, the intensity of the local vibrational modes (LVM) of vacancy-hydrogen complexes and silicon-hydrogen bonds are increasing.

  Info
Periodical
Solid State Phenomena (Volumes 108-109)
Edited by
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Pages
91-96
DOI
10.4028/www.scientific.net/SSP.108-109.91
Citation
W. Düngen, R. Job, Y. Ma, Y. L. Huang, W. R. Fahrner, L.O. Keller, J.T. Horstmann, "µ-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon", Solid State Phenomena, Vols. 108-109, pp. 91-96, 2005
Online since
December 2005
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$32.00
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