µ-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon |
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| Journal | Solid State Phenomena (Volumes 108 - 109) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XI |
| Edited by | B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler |
| Pages | 91-96 |
| DOI | 10.4028/www.scientific.net/SSP.108-109.91 |
| Citation | Wolfgang Düngen et al., 2005, Solid State Phenomena, 108-109, 91 |
| Online since | December, 2005 |
| Authors | Wolfgang Düngen, Reinhart Job, Yue Ma, Yue Long Huang, Wolfgang R. Fahrner, L.O. Keller, J.T. Horstmann |
| Keywords | Annealing Behaviour, H+ Ion Implantation, Plasma Hydrogenation, Raman Spectroscopy, Thermal Evolution of Hydrogen Related Defects, Vacancy Hydrogen Complex |
| Abstract | µ-Raman measurements were carried out on hydrogen implanted, plasma hydrogenated and subsequently annealed Cz Silicon samples, respectively. In comparison to as-implanted or asplasma treated samples, in consideration of the thermal evolution, the effects of the implanted and subsequently plasma treated samples were analyzed. An enhanced trapping of molecular hydrogen in multivacancies has been observed after hydrogen implantation and subsequent plasma hydrogenation. In comparison to as-implanted samples, the intensity of the local vibrational modes (LVM) of vacancy-hydrogen complexes and silicon-hydrogen bonds are increasing. |
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