Paper Title
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Authors: Jinggang Lu, George A. Rozgonyi, James Rand, Ralf Jonczyk
Abstract:The electrical activity of stacking faults (SFs) in multicrystalline sheet silicon has been examined by correlating EBIC(electron beam...
627
Authors: Matthias Stockmeier, Matthias Weisser, Rainer Hock, Andreas Magerl
Abstract:The build-up of strain fields caused by the precipitation of oxygen in Czochralski-silicon during annealing up to 1200°C and for process...
631
Authors: Domenico Mello, Francesco Cordiano, Andrea Gerosa, Margherita Padalino, Carmelo Gagliano, Giovanni Renna, Giovanni Franco
Abstract:Contamination controls are very important issues in microelectronics. Any wrong substance introduction in process chambers can cause damages...
637
Authors: Marko Yli-Koski, Hele Savin, E. Saarnilehto, Antti Haarahiltunen, Juha Sinkkonen, G. Berenyi, T. Pavelka
Abstract:We compare SPV technique with µ−PCD for the determination of recombination activity of copper precipitates in p-Si. The copper precipitates...
643
Authors: M.V. Zamoryanskaya, V.I. Sokolov
Abstract:In this work we studied the cathodoluminescence (CL) of thin silicon oxide and natural silicon oxide grown on different types of silicon...
649
Authors: Markus Zschorsch, G. Gärtner, Hans Joachim Möller, Wilfried von Ammon
Abstract:The content of interstitially solved oxygen (Oi) in heavily boron doped silicon (9- 29 mcm) were measured by low temperature Fourier...
655
Authors: Fabrizio Roccaforte, Salvatore Di Franco, Filippo Giannazzo, Francesco La Via, Sebania Libertino, Vito Raineri, Mario Saggio, Edoardo Zanetti
Abstract:In this paper, some basic aspects related to defects and SiC devices performances are discussed. Our recent work is reviewed and inserted in...
663
Authors: Guillaume Lucas, Laurent Pizzagalli
Abstract:Using first principles molecular dynamics simulations, we have recently determined the threshold displacement energies and the associated...
671
Authors: Laurent Ottaviani, Damien Barakel, Vanessa Vervisch, Marcel Pasquinelli
Abstract:4H-SiC epitaxial layers were hydrogenated by means of plasma treatment and annealing, aiming at passivating the surface by forming bonds with...
677
Authors: Jan Vanhellemont, Steven Hens, J. Lauwaert, Olivier De Gryse, Piet Vanmeerbeek, Dirk Poelman, P. Śpiewak, Igor Romandic, Antoon Theuwis, Paul Clauws
Abstract:Recent progress is presented in the understanding of grown-in defects in Czochralskigrown germanium crystals with special emphasis on...
683
Showing 101 to 110 of 129 Paper Titles