Paper Title
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Authors: M. Baran, L. Khomenkova, N. Korsunska, T. Stara, Moissei K. Sheinkman, V. Yukhymchuk, V. Khomenkov, Y. Goldstein, J. Jedrzejewski, E. Savir
Abstract:The aging process of silicon nanostructures obtained by magnetron sputtering and electrochemical etching is investigated by photoluminescence...
59
Authors: M.D. Efremov, Vladimir A. Volodin, D.V. Marin, Sofia A. Arzhannikova, M.G. Ivanov, S.V. Gorajnov, A.I. Korchagin, V.V. Cherepkov, A.V. Lavrukhin, S.N. Fadeev, R.A. Salimov, S.P. Bardakhanov
Abstract:Silicon nanopowders were produced using electron-beam-induced evaporation of bulk silicon ingots in various gas atmosphere. Optical...
65
Authors: Jeremie Grisolia, M. Shalchian, G. Benassayag, H. Coffin, C. Bonafos, C. Dumas, S.M. Atarodi, A. Claverie
Abstract:In this paper, we have studied the evolution of quantum electronic features with the size of silicon nanoparticles embedded in an ultra-thin...
71
Authors: Ida E. Tyschenko, A.A. Frantsuzov, O.V. Naumova, B.I. Fomin, D.V. Nikolaev, V.P. Popov
Abstract:Electro-physical properties of metal-oxide-silicon (MOS) structures and MOS transistors, prepared in the top silicon layer of...
77
Authors: Vladimir A. Volodin, E.B. Gorokhov, D.V. Marin, A.G. Cherkov, Anton K. Gutakovskii, M.D. Efremov
Abstract:Ge nanocrystals (NCs) in GeO2 films obtained with the use of two methods were studied. The first method is a film deposition from...
83
Authors: Wolfgang Düngen, Reinhart Job, Yue Ma, Yue Long Huang, Wolfgang R. Fahrner, L.O. Keller, J.T. Horstmann
Abstract:µ-Raman measurements were carried out on hydrogen implanted, plasma hydrogenated and subsequently annealed Cz Silicon samples, respectively....
91
Authors: Robert J. Falster, Vladimir V. Voronkov, V.Y. Resnick, M.G. Mil'vidskii
Abstract:This paper presents a qualitative description and quantitative model of the technologically important problem of the transition from...
97
Authors: Kozo Nakamura, Junsuke Tomioka
Abstract:This paper presents a model for the analysis of the surface nucleation and growth of Ni silicide on silicon wafers contaminated by Ni. The...
103
Authors: R. Khalil, Vitaly V. Kveder, Wolfgang Schröter, Michael Seibt
Abstract:Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The...
109
Authors: Kazuhito Matsukawa, Nobusuke Hattori, Shigeto Maegawa, Koun Shirai, Hiroshi Katayama-Yoshida
Abstract:The binding energy between 3d transition metals (TM) such as iron (Fe), nickel (Ni) and copper (Cu), and boron (B) in Si are studied using...
115
Showing 11 to 20 of 129 Paper Titles