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Gettering and Defect Engineering in Semiconductor Technology XI

Solid State Phenomena Volumes 108 - 109

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• p187 Formation of the Buried Insulating Si_xN_y Layer in the Region of Radiation Defects Created by Hydrogen Implantation in Silicon Wafer   [ 503 K ]
  Authors: A.V. Frantskevich, Anis M. Saad, A.K. Fedotov, A.V. Mazanik, N.V. Frantskevich
• p193 A Theoretical Study of Dislocation Formation at Surfaces in Covalent Materials: Effect of Step Geometry and Reactivity   [ 689 K ]
  Authors: Sandrine Brochard, Julien Godet, Laurent Pizzagalli, Pierre Beauchamp, José Soler
• p199 Peculiarities of the Initial Stage of Oxygen Precipitation in Irradiated Silicon   [ 20 M ]
  Authors: A.A. Groza, M.I. Starchik, P.G. Litovchenko, A.P. Litovchenko, D. Bisello, R. Rando, P. Giubilato, A. Candelori, V. Khomenkov
• p205 The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon   [ 173 K ]
  Authors: Charalamos A. Londos, G.D. Antonaras, M.S. Potsidi, Andrzej Misiuk, Valentin V. Emtsev
• p211 Evolution of Hydrogen Related Defects in Plasma Hydrogenated Crystalline Silicon under Thermal and Laser Annealing   [ 368 K ]
  Authors: Yue Ma, Yue Long Huang, Reinhart Job, Wolfgang Düngen, Wolfgang R. Fahrner
• p217 Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors   [ 297 K ]
  Authors: L.F. Makarenko, F.P. Korshunov, S.B. Lastovski, Stanislav B. Lastovskii, N.M. Kazuchits, M.S. Rusetsky, Eckhart Fretwurst, G. Lindström, Michael Moll, Ioana Pintilie, N.I. Zamiatin
• p223 Metastable VO₂ Complexes in Silicon: Experimental and Theoretical Modeling Studies   [ 132 K ]
  Authors: L.I. Murin, J. Lennart Lindström, Vladimir P. Markevich, I.F. Medvedeva, Vitor J.B. Torres, João A.P. Coutinho, R. Jones, Patrick R. Briddon
• p229 Hydrogen-Related Donors in Silicon: Centers with Negative Electronic Correlation Energy   [ 178 K ]
  Authors: Yurii M. Pokotilo, Alla N. Petukh, Valentin V. Litvinov, B.G. Tsvirko
• p235 Quantum-Chemical Simulation of Silicon Grain Boundaries Contaminated by Oxygen and Carbon   [ 449 K ]
  Authors: Anis M. Saad, Alex L. Pushkarchuk, A.V. Mazanik, A.K. Fedotov, S.A. Kuten
• p241 Study of Au Diffusion in Nitrogen-Doped FZ Si   [ 140 K ]
  Authors: Eugene B. Yakimov
• p245 Control of Oxygen Precipitation in Silicon by Infrared Laser Irradiation   [ 183 K ]
  Authors: Hiroshi Yamada Kaneta, K. Tanahashi
• p253 Electronic Properties and Thermal Stability of Defects Induced by MeV Electron/Ion Irradiations in Unstrained Germanium and SiGe Alloys   [ 217 K ]
  Authors: Vladimir P. Markevich, Anthony R. Peaker, L.I. Murin, Valentin V. Emtsev, Valentin V. Litvinov, Nikolay V. Abrosimov, L. Dobaczewski
• p261 Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies   [ 214 K ]
  Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, N.A. Tripachko, Mikhail G. Sosnin, A.V. Duvanskii, L.I. Murin, J. Lennart Lindström, Stanislav B. Lastovskii, L.F. Makarenko, Vladimir P. Markevich, Anthony R. Peaker
• p267 VO_n (n≥3) Defects in Irradiated and Heat-Treated Silicon   [ 181 K ]
  Authors: L.I. Murin, J. Lennart Lindström, Bengt G. Svensson, Vladimir P. Markevich, Anthony R. Peaker, Charalamos A. Londos
• p273 Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon   [ 112 K ]
  Authors: Vladimir P. Markevich, L.I. Murin, Stanislav B. Lastovskii, I.F. Medvedeva, J. Lennart Lindström, Anthony R. Peaker, João A.P. Coutinho, R. Jones, Vitor J.B. Torres, Sven Öberg, Patrick R. Briddon