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Gettering and Defect Engineering in Semiconductor Technology XI

Solid State Phenomena Volumes 108 - 109

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• p279 Impact of Hydrogenation on Electrical Properties of NiSi₂ Precipitates in Silicon   [ 257 K ]
  Authors: O.F. Vyvenko, N.V. Bazlov, M.V. Trushin, A.A. Nadolinski, Michael Seibt, Wolfgang Schröter, George T. Hahn
• p285 On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers   [ 522 K ]
  Authors: Eddy Simoen, G. Eneman, Sheron Shamuilia, V. Simons, Eugenijus Gaubas, R. Delhougne, R. Loo, K. De Meyer, C. Claeys
• p291 Novel Low-K Dielectric Obtained by Xenon Implantation in SiO₂   [ 3 M ]
  Authors: H. Assaf, E. Ntsoenzok, M.O. Ruault, O. Kaïtasov
• p297 Influence of Metal Contamination in the Measurement of p-Type Cz Silicon Wafer Lifetime and Impact on the Oxide Growth   [ 24 M ]
  Authors: Carole Bigot, Adrien Danel, S. Thevenin
• p303 Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon   [ 1 M ]
  Authors: N. Cherkashin, Martin J. Hÿtch, Fuccio Cristiano, A. Claverie
• p309 Impact of Hydrogen Implantation on Helium Implantation Induced Defects   [ 1 M ]
  Authors: G. Gaudin, Frédéric Cayrel, Corrado Bongiorno, Robert Jérisian, Vito Raineri, Daniel Alquier
• p315 Bulk Radiation Damage Induced in Thin Epitaxial Silicon Detectors by 24 GeV Protons   [ 155 K ]
  Authors: V. Khomenkov, D. Bisello, M. Boscardin, Mara Bruzzi, A. Candelori, G.-F. Dalla Betta, A.P. Litovchenko, C. Piemonte, R. Rando, F. Ravotti, N. Zorzi
• p321 Defect Engineering in Ion Beam Synthesis of SiC and SiO₂ in Si   [ 861 K ]
  Authors: Reinhard Kögler, A. Mücklich, J.R. Kaschny, H. Reuther, F. Eichhorn, H. Hutter, Wolfgang Skorupa
• p327 Electrical Passivation of Silicon Wafers   [ 544 K ]
  Authors: M. Kunst, Frank Wünsch, O. Abdallah, G. Citarella
• p333 Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO₂ System Properties   [ 220 K ]
  Authors: Daniel Kropman, U. Abru, Tiit Kärner, U. Ugaste, E. Mellikov, M. Kauk, Ivo Heinmaa, A. Samoson, Arthur Medvid
• p339 Magnetic-Field-Induced Modification of Properties of Silicon Lattice Defects   [ 142 K ]
  Authors: V.A. Makara, L.P. Steblenko, Yu.L. Kolchenko, S.M. Naumenko, O.A. Patran, V.M. Kravchenko, O.S. Dranenko
• p345 Phase Transition on Surface of IV Group Semiconductors by Laser Radiation   [ 24 M ]
  Authors: Arthur Medvid, Pavels Onufrijevs, Dainis Grabovskis, Aleksandrs Mychko, Valentinas Snitka, Petr M. Lytvyn, Valentina Plaushinaitiene
• p351 Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon   [ 605 K ]
  Authors: Andrzej Misiuk, Barbara Surma, Jadwiga Bak-Misiuk
• p357 A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon   [ 598 K ]
  Authors: S. Peripolli, Marie France Beaufort, David Babonneau, Sophie Rousselet, P.F.P. Fichtner, L. Amaral, Erwan Oliviero, Jean François Barbot, S.E. Donnelly
• p365 First Principles Calculation for Point Defect Behavior, Oxygen Precipitation and Cu Gettering in Czochralski Silicon   [ 1 M ]
  Authors: Koji Sueoka, S. Shiba, S. Fukutani