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Gettering and Defect Engineering in Semiconductor Technology XI

Solid State Phenomena Volumes 108 - 109

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• p567 EBIC and DLTS Study of Deformation Induced Defect Thermal Stability in n-Si   [ 16 M ]
  Authors: Olga V. Feklisova, Eugene B. Yakimov
• p571 Cobalt Contamination in Silicon   [ 423 K ]
  Authors: Maria Luisa Polignano, Daniele Caputo, Davide Codegoni, Vittorio Privitera, M. Riva
• p577 Local Measurements of Diffusion Length and Chemical Character of Metal Clusters in Multicrystalline Silicon   [ 467 K ]
  Authors: Tonio Buonassisi, Andrei A. Istratov, M.A. Marcus, Matthias Heuer, M.D. Pickett, B. Lai, Z. Cai, Steve M. Heald, Eicke R. Weber
• p585 Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon   [ 189 K ]
  Authors: Olivier Palais, Mustapha Lemiti, Jean-Francois Lelievre, Santo Martinuzzi
• p591 Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR   [ 193 K ]
  Authors: M. Porrini, Ivo Crössmann, M.G. Pretto, R. Scala, Reinhard Wolf
• p597 Laser Scattering Tomography on Magnetic CZ-Si for Semiconductor Process Optimization   [ 525 K ]
  Authors: Thomas Steinegger, M. Naumann, F.G. Kirscht
• p603 Potential and Limitations of Electron Holography in Silicon Research   [ 918 K ]
  Authors: Peter Formanek, Martin Kittler
• p609 Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon   [ 20 M ]
  Authors: N. Inoue, M. Nakatsu, K. Tanahashi, Hiroshi Yamada Kaneta, Haruhiko Ono, V.D. Akhmetov, O. Lysytskiy, Hans Richter
• p615 Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal   [ 232 K ]
  Authors: N.Yu. Arutyunov, Valentin V. Emtsev
• p621 Infrared Absorption Measurement of Carbon Concentration down to 1x10¹⁴/cm³ in CZ Silicon   [ 224 K ]
  Authors: N. Inoue, M. Nakatsu
• p627 EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon   [ 2 M ]
  Authors: Jinggang Lu, George A. Rozgonyi, James Rand, Ralf Jonczyk
• p631 The Build-Up of Strain Fields in Czochralski-Si Observed in Real Time by High Energy X-Ray Diffraction   [ 1009 K ]
  Authors: Matthias Stockmeier, Matthias Weisser, Rainer Hock, Andreas Magerl
• p637 In-Line Monitor Introduction to Prevent Metallic Contamination in Wet Bench   [ 769 K ]
  Authors: Domenico Mello, Francesco Cordiano, Andrea Gerosa, Margherita Padalino, Carmelo Gagliano, Giovanni Renna, Giovanni Franco
• p643 Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods   [ 157 K ]
  Authors: Marko Yli-Koski, Hele Savin, E. Saarnilehto, Antti Haarahiltunen, Juha Sinkkonen, G. Berenyi, T. Pavelka
• p649 The Employment of Cathodoluminescent Method for Characterization of Silicon Oxide - Silicon Interface   [ 161 K ]
  Authors: M.V. Zamoryanskaya, V.I. Sokolov