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Gettering and Defect Engineering in Semiconductor Technology XI

Solid State Phenomena Volumes 108 - 109

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• p655 Measurement of Oi in Heavily Boron Doped Chemical Thinned Silicon by Low Temperature FTIR Spectroscopy   [ 182 K ]
  Authors: Markus Zschorsch, G. Gärtner, Hans Joachim Möller, Wilfried von Ammon
• p663 Silicon Carbide: Defects and Devices   [ 406 K ]
  Authors: Fabrizio Roccaforte, Salvatore Di Franco, Filippo Giannazzo, Francesco La Via, Sebania Libertino, Vito Raineri, Mario Saggio, Edoardo Zanetti
• p671 Ab Initio Investigations of Threshold Displacement Energies and Stability of Associated Defects in Cubic Silicon Carbide   [ 274 K ]
  Authors: Guillaume Lucas, Laurent Pizzagalli
• p677 Electrical Characterizations of Hydrogenated 4H-SiC Epitaxial Samples   [ 506 K ]
  Authors: Laurent Ottaviani, Damien Barakel, Vanessa Vervisch, Marcel Pasquinelli
• p683 Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon   [ 286 K ]
  Authors: Jan Vanhellemont, Steven Hens, J. Lauwaert, Olivier De Gryse, Piet Vanmeerbeek, Dirk Poelman, P. Śpiewak, Igor Romandic, Antoon Theuwis, Paul Clauws
• p691 Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium Substrates   [ 455 K ]
  Authors: Eddy Simoen, A. Satta, Marc Meuris, Tom Janssens, T. Clarysse, A. Benedetti, C. Demeurisse, B. Brijs, I. Hoflijk, W. Vandervorst, C. Claeys
• p697 Theoretical Investigations of the Energy Levels of Defects in Germanium   [ 89 K ]
  Authors: R. Jones, A. Carvalho, João A.P. Coutinho, Vitor J.B. Torres, Sven Öberg, Patrick R. Briddon
• p703 Some Recent Advances on the n-Type Doping of Diamond   [ 180 K ]
  Authors: Jacques Chevallier, T. Kociniewski, Cecile Saguy, R. Kalish, C. Cytermann, M. Barbé, D. Ballutaud, François Jomard, A. Deneuville, C. Baron, James E. Butler, Satoshi Koizumi
• p709 Helium Implantation Damage in SiC   [ 177 K ]
  Authors: Stephanie Leclerc, Marie France Beaufort, Valerie Audurier, Alain Déclemy, Jean François Barbot
• p713 6H(n⁺)/3C(n)/6H(p⁺) - SiC Structures Grown by Sublimation Epitaxy   [ 523 K ]
  Authors: Anatoly M. Strel'chuk, Alexander A. Lebedev, A.E. Cherenkov, Alexey N. Kuznetsov, Alla S. Tregubova, M.P. Scheglov, L.M. Sorokin, S. Yoneda, Shigehiro Nishino
• p717 Current Transport by Defects in Pr₂O₃ High K Films   [ 24 M ]
  Authors: Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Salvatore Lombardo
• p723 Pulsed Laser Deposition of Hafnium Oxide on Silicon   [ 598 K ]
  Authors: Mathias Kappa, Markus Ratzke, Jürgen Reif
• p729 Modification of Silicon Oxide by High Energy Electron Beam   [ 3 M ]
  Authors: E.V. Kolesnikova, Alla A. Sitnikova, V.I. Sokolov, M.V. Zamoryanskaya
• p735 Calibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption   [ 223 K ]
  Authors: Valentin V. Litvinov, Bengt G. Svensson, L.I. Murin, J. Lennart Lindström, Vladimir P. Markevich
• p741 Structural Characterization of Epitaxial Si / Pr₂O₃ / Si(111) Heterostructures   [ 710 K ]
  Authors: P. Zaumseil, T. Schroeder, G. Weidner