Paper Title:
Characterization of TiOxNy Films Grown by PECVD Method: Structural and Optical Properties
  Abstract

Titanium oxynitride (TiOxNy) films were prepared by RF PECVD on Si(100) and glass substrates using nitrogen and argon mixture gas. Titanium iso-propoxide (Ti[OCH(CH3) 2] 4, 97%) was used as precursor with different nitrogen flow rate to control oxygen and nitrogen contents in the films. Changes of chemical states of constituent elements in the deposited films were examined by X-ray photoelectron spectroscopy (XPS) analysis. With increasing nitrogen flow rate the total amount of nitrogen was increased while that of oxygen was decreased. The film growth orientation and N-H peak intensity characteristics were also analyzed by X-ray diffraction (XRD), atomic force microscopy (AFM), and infrared spectroscopy (FT-IR). Through refractive index as well as contact angle analysis, we can suggest that relationship to surface energy and optical property. Moreover, transmission electron microscopy (TEM) was also used to investigate the morphology of TiOxNy thin film and the phase of the TiOxNy thin film different nitrogen flow rate.

  Info
Periodical
Solid State Phenomena (Volume 111)
Edited by
Cheng-Jun Sun, Jun Ding, Manoj Gupta, Gan-Moog Chow, Lynn Kurihara and Lawrence Kabacoff
Pages
151-154
DOI
10.4028/www.scientific.net/SSP.111.151
Citation
C.K. Jung, I.S. Bae, Y.H. Song, S.J. Cho, J. H. Boo, "Characterization of TiOxNy Films Grown by PECVD Method: Structural and Optical Properties", Solid State Phenomena, Vol. 111, pp. 151-154, 2006
Online since
April 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Xi Yun He, Ai Li Ding, Yong Zhang, Zi Ping Cao, Ping Sun Qiu
Abstract:PLZT (9/65/35) thin films on sapphire (001) substrates with thickness of 0.1 ~ 0.9 µm were prepared by a metal-organic decomposition (MOD)...
231
Authors: Bum Rae Cho
Abstract:Indium tin oxide (ITO) used in many applications such as electronic and optical devices were deposited on the soda lime glass substrate by...
195
Authors: Sang Moo Park, Takashi Tomemori, Tomoaki Ikegami, Kenji Ebihara
Abstract:High-quality transparent conductive Al-doped ZnO (AZO) thin films were deposited by pulsed laser deposition on quartz glass substrates at...
211
Authors: Xiao Long Weng, Wu Tang, Yu Tao Wu, Long Jiang Deng
Abstract:Sn doped indium oxide (ITO) films were fabricated on polyethylene terephtalate (PET) substrate by magnetron sputtering at low deposition...
1867
Authors: Bo Hong, Xue Mei Wu, Lan Jian Zhuge, Zhao Feng Wu, Fei Zhou
Abstract:Amorphous silicon carbide nitride (SiCN) films have been deposited in a dual ion beam sputtering deposition (DIBSD) using a SiC target. Films...
1243