Paper Title:
Pressure-Assisted Lateral Nanostructuring of the Epitaxial Silicon Layers with SiGe Quantum Wells
  Abstract

Transformations of the SiGe/Si superlattice structures, either annealed at high pressure, or irradiated by high energy ions and subjected to post-implantation annealing, were studied and compared. Both types of treatments were found to lead to the formation of recharged defects clusters, resulting in the appearance of peaks on C-V characteristics, shrinkage of Ge profiles registered by SIMS technique after annealing, and disappearance of peaks in the free carrier profiles. The effects were more pronounced in the case of high energy ion implantation. The results are explained by the vacancy - assisted precipitation of Ge in SiGe layers.

  Info
Periodical
Solid State Phenomena (Volume 114)
Edited by
Witold Lojkowski and John R. Blizzard
Pages
291-296
DOI
10.4028/www.scientific.net/SSP.114.291
Citation
I.V. Antonova, M.B. Gulyaev, V.A. Skuratov, R.A. Soots, V.I. Obodnikov, A. Misiuk, P. Zaumseil, "Pressure-Assisted Lateral Nanostructuring of the Epitaxial Silicon Layers with SiGe Quantum Wells", Solid State Phenomena, Vol. 114, pp. 291-296, 2006
Online since
July 2006
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