Paper Title:
Effect of Post Deposition Annealing Temperature on the Optoelectrical Property of ITO Thin Films Prepared by Magnetron Sputter Type Negative Metal Ion Source
  Abstract

Transparent conducting indium tin oxide (ITO) thin films were deposited on glass substrates by magnetron sputter type negative metal ion source (MSNIS) using ITO target and then the effect of post deposition annealing temperature on the optoelectrical property of ITO film has been investigated. The resistivity and optical transmittance of ITO films that prepared at 70°C (without intentional substrate heating) with optimized deposition condition reached at 6.2×10-4  cm and 80%, respectively. As increasing post deposition annealing temperature, a rapid decrease is observed in the resistivity. The lowest resistivity of 1.7×10-4  cm and the highest optical transmittance of 83% were obtained at the post annealing temperature of 300°C. From the XRD and SEM measurements, the increment of the optical transmittance and conductivity by post deposition annealing treatment is attributed to the enhanced crystallinity of the ITO film.

  Info
Periodical
Solid State Phenomena (Volume 118)
Edited by
Jang Hyun Sung, Chan Gyu Lee, Yong Zoo You, Young Kook Lee and Jae Young Kim
Pages
287-292
DOI
10.4028/www.scientific.net/SSP.118.287
Citation
D.I. Kim, Y.Z. Yoo, H.G. Chun, "Effect of Post Deposition Annealing Temperature on the Optoelectrical Property of ITO Thin Films Prepared by Magnetron Sputter Type Negative Metal Ion Source", Solid State Phenomena, Vol. 118, pp. 287-292, 2006
Online since
December 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hai Yi Li, Yan Lai Wang, Shi Liang Ban, Yi Min Wang
Chapter 6: Composite Materials
Abstract:CdS thin films deposited on glass substrate are prepared by chemical bath deposition using the reaction between CdSO4 and CS...
1406
Authors: Ping Luan, Jian Sheng Xie, Jin Hua Li
Chapter 3: Surface, Subsurface, and Interface Phenomena
Abstract:Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films...
822
Authors: Jian Sheng Xie, Ping Luan, Jin Hua Li
Chapter 9: Composite Materials II
Abstract:Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by multilayer synthesized method. The structure of...
2770
Authors: Jian Sheng Xie, Jin Hua Li, Ping Luan
Chapter 2: Surface, Subsurface and Interface Phenomena
Abstract:Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N2 atmosphere at different...
302
Authors: Xiao Hua Sun, Shuang Hou, Zhi Meng Luo, Cai Hua Huang, Zong Zhi Hu
Chapter 1: Engineering Science for Manufacturing
Abstract:Bismuth zinc niobate titanium (Bi1.5Zn0.5 Nb0.5Ti1.5O7) (BZNT) thin films were deposited on PtTiSiO2Si substrates by radio frequency (rf)...
211