Paper Title:
POSS-Containing Nanocomposite Materials for Next Generation Nanolithography
  Abstract

Nanocomposite materials based on poly(p-hydroxystyrene-co-2-methyl-2-adamantyl methacrylate-co-methacrylisobutyl-POSS) were synthesized and evaluated as EUV chemically amplified resists. Incorporation of 2-methyl-2-adamantyl and POSS groups into the matrix polymer made it possible to improve the dry-etch resistance, and excellent lithographic performance was obtained. The well-defined 250 nm positive patterns were obtained using a KrF excimer laser scanner, and 100 nm elbow patterns using an EUV lithography tool. The dry-etch resistance of this resist for a CF4-based plasma was comparable to that of poly(p-hydroxystyrene).

  Info
Periodical
Solid State Phenomena (Volume 119)
Edited by
Chang Kyu Rhee
Pages
299-302
DOI
10.4028/www.scientific.net/SSP.119.299
Citation
J. H. Choi, P. H. Kang, Y. C. Nho, S. K. Hong, "POSS-Containing Nanocomposite Materials for Next Generation Nanolithography", Solid State Phenomena, Vol. 119, pp. 299-302, 2007
Online since
January 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Martine Claes, Vasile Paraschiv, S. Beckx, M. Demand, W. Deweerd, Sylvain Garaud, H. Kraus, Rita Vos, James Snow, Werner Boullart, Stefan De Gendt
93
Authors: Nitipon Puttaraksa, Mari Napari, Orapin Chienthavorn, Rattanaporn Norarat, Timo Sajavaara, Mikko Laitinen, Somsorn Singkarat, Harry J. Whitlow
Abstract:The lithographic exposure characteristic of amorphous silica (SiO2) was investigated for 6.8 MeV 16O3+ ions....
132
Authors: Chuan Yu Yen, Mu Chien Luo, Kuo Bin Huang, Ting Chun Wang
Chapter 3: Surface Chemistry and Functionalisation
Abstract:The continually increasing complexity of IC integration drives the reduction of device dimensions. Because of this, material loss that alters...
86
Authors: Miao Qin Wen, Tao Jiang, Ying Ding
Chapter 4: Biomaterials and Chemical Materials
Abstract:Polyhedral oligemeric silsesquioxanes epoxy (POSS-EP) was prepared from 3-glycidyloxy-propyl-trimethoxysilane (KH-560) and...
199
Authors: Philippe Garnier, Marc Neyens
Chapter 4: FEOL: Photoresist Removal, General Cleaning
Abstract:Still nowadays in integrated circuits manufacturing, few materials patterns are defined by a wet etch on patterned deep UV photoresist. From...
117