POSS-Containing Nanocomposite Materials for Next Generation Nanolithography |
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| Journal | Solid State Phenomena (Volume 119) |
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| Volume | Nanocomposites and Nanoporous Materials VII |
| Edited by | Chang Kyu Rhee |
| Pages | 299-302 |
| DOI | 10.4028/www.scientific.net/SSP.119.299 |
| Citation | Jae Hak Choi et al., 2007, Solid State Phenomena, 119, 299 |
| Online since | January, 2007 |
| Authors | Jae Hak Choi, Phil Hyun Kang, Young Chang Nho, Sung Kwon Hong |
| Keywords | EUV Lithography, Nanocomposite, Polyhedral Oligomeric Silsesquioxane (POSS), Resist |
| Abstract | Nanocomposite materials based on poly(p-hydroxystyrene-co-2-methyl-2-adamantyl methacrylate-co-methacrylisobutyl-POSS) were synthesized and evaluated as EUV chemically amplified resists. Incorporation of 2-methyl-2-adamantyl and POSS groups into the matrix polymer made it possible to improve the dry-etch resistance, and excellent lithographic performance was obtained. The well-defined 250 nm positive patterns were obtained using a KrF excimer laser scanner, and 100 nm elbow patterns using an EUV lithography tool. The dry-etch resistance of this resist for a CF4-based plasma was comparable to that of poly(p-hydroxystyrene). |
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