Paper Title:
Kinetic Monte Carlo Simulation of Semiconductor Quantum Dot Growth
  Abstract

Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
1073-1076
DOI
10.4028/www.scientific.net/SSP.121-123.1073
Citation
C. Zhao, Y.H. Chen, J. Sun, W. Lei, C.X. Cui, L.K. Yu, K. Li, Z.G. Wang, "Kinetic Monte Carlo Simulation of Semiconductor Quantum Dot Growth", Solid State Phenomena, Vols. 121-123, pp. 1073-1076, 2007
Online since
March 2007
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