Paper Title:
Monte Carlo Simulation of Projection Electron Beam Lithography
  Abstract

We have calculated angular and energy loss distributions of electrons transmitted through masks for electron projection lithography by using a Monte Carlo simulation method. The angular and energy loss distributions are much wider in the mask stack than those in the membrane layer. The large non-scattering and non-energy-loss probabilities are also found for the membrane layer. High contrast image can thus be achieved within a small size of aperture.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
1097-1102
DOI
10.4028/www.scientific.net/SSP.121-123.1097
Citation
X. Sun, P. Xiao, Z.J. Ding, "Monte Carlo Simulation of Projection Electron Beam Lithography", Solid State Phenomena, Vols. 121-123, pp. 1097-1102, 2007
Online since
March 2007
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Price
$35.00
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