Paper Title:
Synthesis and Characterization of In-Doped SnO2 (ITO) Nanowires
  Abstract

Large-scale synthesis of In-doped SnO2 (ITO) nanowires was achieved by direct thermal evaporation of a mixture of Sn and In powders at 900°C in an Argon atmosphere. Scanning electron microscopy and transmission electron microscopy observations show that ITO nanowires have diameter ranging from 20 to 100 nm and lengths up to several tens of micrometers. By altered the reaction temperature, we find that the temperature of the reaction is the critical factor for the morphologies and sizes of the ITO nanowires.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
209-214
DOI
10.4028/www.scientific.net/SSP.121-123.209
Citation
Z. Y. Huang, "Synthesis and Characterization of In-Doped SnO2 (ITO) Nanowires", Solid State Phenomena, Vols. 121-123, pp. 209-214, 2007
Online since
March 2007
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$32.00
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