Paper Title:
The Effect of Nitrogen Partial Pressure on Microstructure of Reaction Bonded Silicon Nitride
  Abstract

The interaction between gas atmosphere and silicon during reaction bonded silicon nitride(RBSN)process leads to a non-uniform band formation of alpha silicon nitride. The reaction layer, α -Si3N4, was formed near the surface of the sample in the early stage of RBSN. Reactive nitrogen gas was supplied as static state using computer controlled gas delivery system. The formation of α -Si3N4 band near the surface of the sample can be explained thermodynamically, based on the nitrogen partial pressure in the gas mixtures.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
231-234
DOI
10.4028/www.scientific.net/SSP.121-123.231
Citation
C. Park, K. S. Bang, K. T. Lim, D. S. Park, H. D. Kim, "The Effect of Nitrogen Partial Pressure on Microstructure of Reaction Bonded Silicon Nitride", Solid State Phenomena, Vols. 121-123, pp. 231-234, 2007
Online since
March 2007
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$32.00
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