Paper Title:
Direct Wafer Bonding for Nanostructure Preparations
  Abstract

Direct Wafer Bonding has been widely developed and is very attractive for a lot of applications. Using original techniques based on direct bonding enable to carry out specific engineered substrates. Various illustrations are given among which twisted Si-Si bonded substrates, where buried dislocation networks play a key role in the subsequent elaboration of nanostructures.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
29-32
DOI
10.4028/www.scientific.net/SSP.121-123.29
Citation
H. Moriceau, F. Rieutord, C. Morales, A.M. Charvet, O. Rayssac, B. Bataillou, F. Fournel, J. Eymery, A. Pascale, P. Gentile, A. Bavard, J. Mézière, C. Maleville, B. Aspar, "Direct Wafer Bonding for Nanostructure Preparations", Solid State Phenomena, Vols. 121-123, pp. 29-32, 2007
Online since
March 2007
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Price
$32.00
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