Direct Wafer Bonding for Nanostructure Preparations |
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| Journal | Solid State Phenomena (Volumes 121 - 123) |
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| Volume | Nanoscience and Technology |
| Edited by | Chunli BAI, Sishen XIE, Xing ZHU |
| Pages | 29-32 |
| DOI | 10.4028/www.scientific.net/SSP.121-123.29 |
| Citation | Hubert Moriceau et al., 2007, Solid State Phenomena, 121-123, 29 |
| Online since | March, 2007 |
| Authors | Hubert Moriceau, F. Rieutord, C. Morales, A.M. Charvet, O. Rayssac, B. Bataillou, F. Fournel, J. Eymery, A. Pascale, P. Gentile, A. Bavard, J. Mézière, Christophe Maleville, B. Aspar |
| Keywords | Bonded Heterostructures, Bonding Interface, Direct Wafer Bonding, Dislocations, Hydrophilic, Hydrophobic, Nanometer-Scale, Periodic Networks, Si-Si Bonded Structures, SOI |
| Abstract | Direct Wafer Bonding has been widely developed and is very attractive for a lot of applications. Using original techniques based on direct bonding enable to carry out specific engineered substrates. Various illustrations are given among which twisted Si-Si bonded substrates, where buried dislocation networks play a key role in the subsequent elaboration of nanostructures. |
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