Laser Induced Surface Nanostructuring on Ultra-Thin Amorphous Si Films |
| Journal |
Solid State Phenomena (Volumes 121 - 123) |
| Volume |
Nanoscience and Technology |
| Edited by |
Chunli BAI, Sishen XIE, Xing ZHU |
| Pages |
33-36 |
| DOI |
10.4028/www.scientific.net/SSP.121-123.33 |
| Online since |
March, 2007 |
| Authors |
X. Li,
Z. Cen,
J. Xu,
X. Huang,
Kai Chen
|
| Keywords |
Laser Irradiation, Surface Nanostructure, Ultrathin Si Films |
| Abstract |
A new approach to obtain Si nanostructures on insulating layer is proposed by laser irradiation on
ultra-thin hydrogenated amorphous silicon (a-Si:H) films with subsequently thermal annealing. It
was found that the surface nanostructuring was occurred when the laser fluence exceeded the
threshold value as revealed by AFM images. The size and area density of formed Si nanostructures
were depended on the laser fluence and film thickness while thermal annealing played an important
role in the size and its distribution. The results showed that a high density (>1011cm-2) Si
nanostructures with average lateral size of 10-20nm can be achieved by the present technology. |
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