Long erbium disilicide nanowires were fabricated through laser ablation and annealing process on the Si (001) surface. The ErSi2 nanowires were along the perpendicular Si <110> directions. The average width of nanowires is less than 10nm and the maximum length is more then 10um. The electrical transport properties of the ErSi2 nanowires were measured and a resistivity value of 1.87×10-6Ωm was acquired. These self-assembled Si-based nanowires could be used for further devices applications.