Paper Title:
Electrical Transport Properties in Self-Assembled Erbium Disilicide Nanowires
  Abstract

Long erbium disilicide nanowires were fabricated through laser ablation and annealing process on the Si (001) surface. The ErSi2 nanowires were along the perpendicular Si <110> directions. The average width of nanowires is less than 10nm and the maximum length is more then 10um. The electrical transport properties of the ErSi2 nanowires were measured and a resistivity value of 1.87×10-6Ωm was acquired. These self-assembled Si-based nanowires could be used for further devices applications.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
413-416
DOI
10.4028/www.scientific.net/SSP.121-123.413
Citation
Z. G. Li, X. W. Zhao, S. B. Long, L. H. Zhang, M. Liu, "Electrical Transport Properties in Self-Assembled Erbium Disilicide Nanowires", Solid State Phenomena, Vols. 121-123, pp. 413-416, 2007
Online since
March 2007
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$32.00
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