Paper Title:
Study on Opto-Electronic Integration of Resonant Tunnelling Diodes
  Abstract

We designed the monolithic opto-electronic integrated circuit composed by Resonant Tunnelling Diodes (RTD) and Heterojunction Phototransistor (HPT). Circuit simulation of RTD and HPT integration is firstly processed. The material structure and technological process of the device is introduced in detail. A good characteristic is obtained with high Peak-to-valley current ratio.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
533-536
DOI
10.4028/www.scientific.net/SSP.121-123.533
Citation
P. J. Niu, H. R. Hu, H. W. Liu, W. X. Wang, X. Z. Shang, "Study on Opto-Electronic Integration of Resonant Tunnelling Diodes", Solid State Phenomena, Vols. 121-123, pp. 533-536, 2007
Online since
March 2007
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$32.00
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