Paper Title:
Self-Assembled GaAs Quantum Rings by MBE Droplet Epitaxy
  Abstract

Fabrication of semiconductor nanostructures such as quantum dots (QDs), quantum rings (QRs) has been considered as the important step for realization of solid state quantum information devices, including QDs single photon emission source, QRs single electron memory unit, etc. To fabricate GaAs quantum rings, we use Molecular Beam Epitaxy (MBE) droplet technique in this report. In this droplet technique, Gallium (Ga) molecular beams are supplied initially without Arsenic (As) ambience, forming droplet-like nano-clusters of Ga atoms on the substrate, then the Arsenic beams are supplied to crystallize the Ga droplets into GaAs crystals. Because the morphologies and dimensions of the GaAs crystal are governed by the interplay between the surface migration of Ga and As adatoms and their crystallization, the shape of the GaAs crystals can be modified into rings, and the size and density can be controlled by varying the growth temperatures and As/Ga flux beam equivalent pressures(BEPs). It has been shown by Atomic force microscope (AFM) measurements that GaAs single rings, concentric double rings and coupled double rings are grown successfully at typical growth temperatures of 200°C to 300°C under As flux (BEP) of about 1.0×10-6 Torr. The diameter of GaAs rings is about 30-50 nm and thickness several nm.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
541-544
DOI
10.4028/www.scientific.net/SSP.121-123.541
Citation
S. S. Huang, Z. C. Niu, J. B. Xia, "Self-Assembled GaAs Quantum Rings by MBE Droplet Epitaxy", Solid State Phenomena, Vols. 121-123, pp. 541-544, 2007
Online since
March 2007
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Price
$32.00
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